1. product pro?le 1.1 general description p-channel enhancement mode field-effect transistor (fet) in a plastic package using trenchmos technology. 1.2 features 1.3 applications 1.4 quick reference data 2. pinning information PMN50XP n low threshold voltage n low on-state losses n low power dc-to-dc converters n battery management n load switching n battery powered portable equipment n v ds - 20 v n i d - 4.8 a n r dson 60 m w n q gd = 1.3 nc (typ) table 1: pinning pin description simpli?ed outline symbol 1, 2, 5, 6 drain (d) sot457 (tsop6) 3 gate (g) 4 source (s) 13 2 4 5 6 s d g 003aaa671 product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 of 2
3. ordering information 4. limiting values table 2: ordering information type number package name description version PMN50XP tsop6 plastic surface mounted package (tsop6); 6 leads sot457 table 3: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage 25 c t j 150 c- - 20 v v dgr drain-gate voltage (dc) 25 c t j 150 c; r gs =20k w - - 20 v v gs gate-source voltage - 12 v i d drain current t sp =25 c; v gs = - 4.5 v; see figure 2 and 3 - - 4.8 a t sp = 100 c; v gs = - 4.5 v; see figure 2 - - 3a i dm peak drain current t sp =25 c; pulsed; t p 10 m s; see figure 3 - - 19.4 a p tot total power dissipation t sp =25 c; see figure 1 - 2.2 w t stg storage temperature - 55 +150 c t j junction temperature - 55 +150 c source-drain diode i s source current t sp =25 c- - 1.9 a i sm peak source current t sp =25 c; pulsed; t p 10 m s- - 7.5 a PMN50XP product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 2 of 2
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